BSS138——50V漏源电压NMOS场效应管特征低导通内阻低门限电压快速开关低输入输出漏电流极限值（Ta=25℃，除非另有说明）参数符号值单位Drain-Source VoltageVDS50VContinuous Gate-Source VoltageVGSS±12Continuous Drain CurrentID0.22APower DissipationPD0.35WThermal Resistance from Junction to AmbientRθJA3
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低导通内阻
低门限电压
快速开关
低输入输出漏电流
| 参数 | 符号 | 值 | 单位 |
| Drain-Source Voltage | VDS | 50 | V |
| Continuous Gate-Source Voltage | VGSS | ±12 | |
| Continuous Drain Current | ID | 0.22 | A |
| Power Dissipation | PD | 0.35 | W |
| Thermal Resistance from Junction to Ambient | RθJA | 357 | ℃/W |
| Operating Temperature | Tj | 150 | ℃ |
| Storage Temperature | Tstg | -55 ~+150 |
| 参数 | 符号 | 测试条件 | *小值 | 典型值 | **值 | 单位 |
| Off characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 50 | V | ||
| Gate-body leakage | IGSS | VDS =0V, VGS =±12V | ±1 | µA | ||
| VDS =0V, VGS =±10V | ±0.5 | µA | ||||
| VDS =0V, VGS =±5V | ±0.05 | µA | ||||
| Zero gate voltage drain current | IDSS | VDS =50V, VGS =0V | 0.1 | µA | ||
| On characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =0.25mA | 0.60 | 1.20 | V | |
| Static drain-source on-resistance | RDS(on) | VGS =1.8V, ID =0.05A | 2.50 | Ω | ||
| VGS =2.5V, ID =0.05A | 2.0 | |||||
| VGS =5V, ID =0.05A | 1.6 | |||||
| Forward transconductance | gFS | VDS =10V, ID =0.2A | 0.20 | S | ||
| Dynamic characteristics* | ||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f=1MHz | 58 | pF | ||
| Output capacitance | Coss | 9.75 | ||||
| Reverse transfer capacitance | Crss | 5.2 | ||||
| Gate resistance | RG | VDS =5V,VGS =10mV, f=1MHz | 281 | Ω | ||
| Switching characteristics* | ||||||
| Turn-on delay time | td(on) | VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω | 5 | ns | ||
| Rise time | tr | 5 | ||||
| Turn-off delay time | td(off) | 60 | ||||
| Fall time | tf | 35 | ||||
| Drain-source body diode characteristics | ||||||
| Body diode forward voltage* | VSD | IS=0.115A, VGS = 0V | 1.2 | V |
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