该AP3400MI采用先进的沟道技术NMOS管，提供优良的低内阻RDS（ON），低栅电荷和低至2.5V的栅电压操作。该设备适合作为一个集成电路使用电池保护或其他开关应用。一般特征大电流：VDS=30V ID=5.8A低内阻：RDS（开）<25mΩ@VGS=10V应用蓄电池保护负载开关不间断电源包装标记和订购信息产品型号封装丝印数量(PCS)AP3400M
13728684209
该AP3400MI采用先进的沟道技术NMOS管，提供优良的低内阻RDS（ON），低栅电荷和低至2.5V的栅电压操作。该设备适合作为一个集成电路使用电池保护或其他开关应用。
大电流：VDS=30V ID=5.8A
低内阻：RDS（开）<25mΩ@VGS=10V
蓄电池保护负载开关
不间断电源
| 产品型号 | 封装 | 丝印 | 数量(PCS) |
| AP3400MI | SOT-23-3L | X0(XX-YY). | 3000 |
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 30 | V |
| VGS | Gate-Source Voltage | ±12 | V |
| ID@TA=25℃ | Continuous Drain Current | 5.8 | A |
| ID@TA=70℃ | Continuous Drain Current | 4.9 | A |
| IDM | Pulsed Drain Current2 | 20 | A |
| PD@TA=25℃ | Total Power Dissipation3 | 1 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| RθJA | Thermal Resistance Junction-ambient 1 | 125 | ℃/W |
| RθJA | Thermal Resistance Junction-Ambient 1 (t ≤10s) | 85 | ℃/W |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA | --- | 0.029 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=5A | --- | 21 | 25 | mΩ |
| VGS=4.5V , ID=3A | --- | 23 | 31 | |||
| VGS=2.5V , ID=1A | --- | 30 | 49 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | --- | 1.2 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -2.82 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=5A | --- | 25 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.5 | --- | Ω |
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=5.8A | --- | 11.5 | --- | nC |
| Qgs | Gate-Source Charge | --- | 1.6 | --- | ||
| Qgd | Gate-Drain Charge | --- | 2.9 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3Ω ID=5A | --- | 5 | --- | ns |
| Tr | Rise Time | --- | 47. | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 26 | --- | ||
| Tf | Fall Time | --- | 8 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 530 | --- | pF |
| Coss | Output Capacitance | --- | 130 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 36 | --- | ||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | --- | 5.8 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1.2 | V |
1、 数据通过表面安装在1英寸2 FR-4板上的2OZ铜进行测试。2、 脉冲测试数据，脉宽≤300us，占空比≤2%
3、 其功耗受结温150℃的限制
4、数据理论上与ID和IDM相同，在实际应用中，应受到总功耗的限制。
具体参数请下载PDF文档↓
全国服务热线
微信二维码
******