说明该AP2302BI采用先进的沟道技术,以提供良好的RDS(ON),低栅电荷和低至2.5V的栅电压操作。该设备适合作为一个集成电路使用电池保护或其他开关应用。一般特征VDS=20V ID=2.3ARDS(开)<56mΩ@VGS=4.5V应用领域电池保护负荷开关不间断电源3C数码小家电封装丝印包装封装:SOT23丝印:A2SHB每盘:3000PCS封装及订
13728684209
该AP2302BI采用先进的沟道技术,以提供良好的RDS(ON),低栅电荷和低至2.5V的栅电压操作。该设备适合作为一个集成电路使用电池保护或其他开关应用。
VDS=20V ID=2.3A
RDS(开)<56mΩ@VGS=4.5V
电池保护
负荷开关
不间断电源
3C数码
小家电
封装:SOT23
丝印:A2SHB
每盘:3000PCS
Product ID | Pack | Marking | Qty(PCS) |
AP2302AI | SOT23L | A2SHB | 3000 |
Symbol | Parameter | Rating | Units |
VDS | Drain-Source Voltage | 20 | V |
VGS | Gate-Source Voltage | ±12 | V |
ID@TA=25℃ | Continuous Drain Current, VGS @ 4.5V1 | 3.2 | A |
ID@TA=70℃ | Continuous Drain Current, VGS @ 4.5V1 | 2.8 | A |
IDM | Pulsed Drain Current2 | 14.4 | A |
PD@TA=25℃ | Total Power Dissipation3 | 1 | W |
TSTG | Storage Temperature Range | -55 to 150 | ℃ |
TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
RθJA | Thermal Resistance Junction-ambient 1 | 125 | ℃/W |
RθJC | Thermal Resistance Junction-Case1 | 80 | ℃/W |
Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | --- | --- | V |
RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=3A | --- | 23 | 32 | mΩ |
VGS=2.5V , ID=2A | --- | 29 | 35 | |||
VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.4 | 0.7 | 1.2 | V |
IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=16V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
gfs | Forward Transconductance | VDS=5V , ID=3A | --- | 10.5 | --- | S |
Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=3A | --- | 4.6 | --- | nC |
Qgs | Gate-Source Charge | --- | 0.7 | --- | ||
Qgd | Gate-Drain Charge | --- | 1.5 | --- | ||
Td(on) | Turn-On Delay Time | VDD=10V , VGS=4.5V , RG=3.3Ω ID=3A | --- | 1.6 | --- | ns |
Tr | Rise Time | --- | 42 | --- | ||
Td(off) | Turn-Off Delay Time | --- | 14 | --- | ||
Tf | Fall Time | --- | 7 | --- | ||
Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 310 | --- | pF |
Coss | Output Capacitance | --- | 49 | --- | ||
Crss | Reverse Transfer Capacitance | --- | 35 | --- | ||
IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | --- | 3.6 | A |
VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1.2 | V |