说明15N10功率MOS管采用先进的沟槽技术，提供出色的低内阻和低栅极电压。大PD值，TO252封装，它可广泛应用于负载开关。一般特征●VDS=100V，ID=15A RDS（开）<100mR@VGS=10VRDS（开）<120mR@VGS=4.5V应用领域●汽车应用●硬开关和高频电路●不间断电源●无刷电机●加湿器、雾化器**额定值（TA=25℃，除非另有
13728684209
15N10功率MOS管采用先进的沟槽技术，提供出色的低内阻和低栅极电压。大PD值，TO252封装，它可广泛应用于负载开关。
●VDS=100V，ID=15A RDS（开）<100mR@VGS=10VRDS（开）<120mR@VGS=4.5V
●汽车应用
●硬开关和高频电路
●不间断电源
●无刷电机
●加湿器、雾化器
| Symbol （符号） | Parameter （参数名称） | Value （额定值） | Units （单位） |
| VDS | Drain-Source voltage | 100 | V |
| VGS | Gate-Source voltage | ±20 | V |
| ID | Drain current-Continuous | 15 | A |
| ID(100℃) | Drain current-Continuous(Tc=100℃) | 10 | A |
| IDM | Pulsed Drain Current | 50 | A |
| PD | Maximum Power Dissipation(Tc=25℃) | 45 | W |
| EAS | Single pulse avalanche energy(Note5) | 25 | mJ |
| TJ,Tstg | Operating Junction and Storage Temperature Range | -55-150 | ℃ |
| ROJC | Thermal Resistance,Junction-to-Case(Note2) | 3.0 | ℃/W |
| Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | uA | ||
| Gate-body Leakage | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate-Threshold Voltage | Vth(GS) | VDS= VGS, ID=250 uA | 1.0 | 1.8 | 3.0 | V |
| Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=6.0A | 85 | 100 | mΩ | |
| VGS=4.5V, ID=23.0A | 95 | 120 | ||||
| Dynamic Characteristics(Note4) | ||||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | 690 | pF | ||
| Output Capacitance | Coss | 44 | ||||
| Reverse Transfer Capacitance | Crss | 30 | ||||
| Switching Capacitance(Note4) | ||||||
| Turn-on Delay Time | td(on) | VDD=50V, RL=8.6Ω VGS=10V RGEN=3.0Ω | 7 | nS | ||
| Turn-on Rise Time | tr | 12 | nS | |||
| Turn-off Delay Time | td(off) | 24 | nS | |||
| Turn-off Fall Time | tf | 11 | nS | |||
| Total Gate Charge | Qg | VDS=50V, ID=4.5A, VGS=10V, | 13.4 | nC | ||
| Gate-Source Charge | Qgs | 3.2 | nC | |||
| Gate-Drain Charge | Qgd | 6.2 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage(Note3) | VSD | VGS=0V, ID=1A | 1.2 | V | ||
| Diode Forward Current(Note2 | Is | 15 | A | |||
| Reverse Recovery Time | trr | TJ=25℃，IF=4.5A di/dt=500A/us(Note3) | 11 | nS | ||
| Reverse Recovery Charge | Qrr | 14 | nC | |||
| Forward Turn-On Time | ton | Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD) | ||||
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