说明芯天上S8050三极管,丝印J3Y。此三极管集电极电流可达到足500mA,温升表现优异。**额定值(TA=25℃,除非另有说明)SymbolParameterValueUnitsVCBOCollector-Base Voltage40VVCEOCollector-Emitter Voltage25VVEBOEmitter-Base Voltage5VICCollector Current -Continuous0.5APCCollector Dissipation0.3WTjJunct
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芯天上S8050三极管,丝印J3Y。此三极管集电极电流可达到足500mA,温升表现优异。
Symbol | Parameter | Value | Units |
VCBO | Collector-Base Voltage | 40 | V |
VCEO | Collector-Emitter Voltage | 25 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current -Continuous | 0.5 | A |
PC | Collector Dissipation | 0.3 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55-150 | ℃ |
Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
Collector-base breakdown voltage | V(BR)CBO | IC= 100μA, IE=0 | 40 | V | ||
Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V | ||
Emitter-base breakdown voltage | V(BR)EBO | IE=100μA, IC=0 | 5 | V | ||
Collector cut-off current | ICBO | VCB=40 V , IE=0 | 0.1 | μA | ||
Collector cut-off current | ICEO | VCB=20V , IE=0 | 0.1 | μA | ||
Emitter cut-off current | IEBO | VEB= 5V , IC=0 | 0.1 | μA | ||
DC current gain | HFE(1) | VCE=1V, IC= 50mA | 120 | 400 | ||
HFE(2) | VCE=1V, IC= 500mA | 50 | ||||
Collector-emitter saturation voltage | VCE(sat) | IC=500 mA, IB= 50mA | 0.6 | V | ||
Base-emitter saturation voltage | VBE(sat) | IC=500 mA, IB= 50mA | 1.2 | V | ||
Transition frequency | fT | VCE=6V, IC= 20mA f=30MHz | 150 | MHz |
Rank | L | H | J |
Range | 120-200 | 200-350 | 300-400 |